| PART |
Description |
Maker |
| SID1010CM SID1F10CM SID1K10CM SID1010CXM SID1G10CM |
Infrared LEDs
Infrared LED(For Remote Control)(红外LED（用于远程控制）) 红外发光二极管（对于遥控器）（红外发光二极管（用于远程控制）
Infrared LEDs 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
| ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
http://
|
| TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD.
Toshiba Semiconductor
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TLN11907 TLN119F TLN119 |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation
Toshiba Semiconductor
|
| MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED)
GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TLN208 |
LED LAMP GaAlAs INFRARED EMITTER
INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor
Toshiba Corporation
|
| MIE-114G1 114G1 |
Infrared Emitting Diodes (IRED)
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-144G1 144G1 |
Infrared Emitting Diodes (IRED)
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
